RF analog and digital circuits in SiGe technology

RF analog and digital circuits in SiGe technology

The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed d...

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Bibliographische Detailangaben
Hauptverfasser: Long, J.R., Copeland, M.A., Kovacic, S.J., Malhi, D.S., Harame, D.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Digital circuits
Energy consumption
Germanium silicon alloys
Heterojunction bipolar transistors
Impedance
Noise figure
Preamplifiers
Radio frequency
Silicon germanium
Voltage
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Beschreibung
Zusammenfassung:The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.1996.488523