A 3.3 V 128 Mb multi-level NAND flash memory for mass storage applications

A 3.3 V 128 Mb multi-level NAND flash memory for mass storage applications

The NAND flash memory was originally designed to target solid-state mass storage applications. Key requirements of mass storage, low cost and high serial access throughput, have been achieved by sacrificing a non-critical feature, fast random access. For a quantum step in cost reduction, the multi-l...

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Bibliographische Detailangaben
Hauptverfasser: Tae-Sung Jung, Young-Joon Choi, Kang-Deog Suh, Byung-Hoon Suh, Jin-Ki Kim, Young-Ho Lim, Yong-Nam Koh, Jong-Wook Park, Ki-Jong Lee, Jung-Hoon Park, Kee-Tae Park, Jang-Rae Kim, Jeong-Hyong Lee, Hyung-Kyu Lim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
Circuit simulation
Costs
Flash memory
Latches
Pins
Solid state circuit design
Threshold voltage
Throughput
Voltage control
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Beschreibung
Zusammenfassung:The NAND flash memory was originally designed to target solid-state mass storage applications. Key requirements of mass storage, low cost and high serial access throughput, have been achieved by sacrificing a non-critical feature, fast random access. For a quantum step in cost reduction, the multi-level cell is combined with NAND flash memory. This 128 Mb multi-level NAND flash memory stores two bits per cell by tight programmed cell threshold voltage (Vth) control and is made practical by significantly reducing program disturbs.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.1996.488501