Optical controlled Auger transistor on a base of the STM tunnel contact with H-terminated n-Si surface

Summary form only given. Current-voltage characteristics of the tunnel contact of a STM-tip and an H-terminated n-Si(111) surface have been studied under optical excitation. We have used the abrupt increase of the reverse tunnel current and its strong dependence on the light illumination of the tunnel contact to realise an optical governed point transistor. The observed dependencies of the STM tunnel contact demonstrate new possibilities for using the STM-tip-tunnel separation-semiconductor structure as an optical controlled nanosize Auger-transistor.