Calculation of electronic properties of defects in diamond: application to electron emission

Electron field emission from diamond has been known experimentally to yield large currents at low fields. It has been speculated that electron transport through band gap states can be responsible for sustaining such currents. These band gap states may be generated by defects such as vacancies and grain boundaries in CVD diamond films. In this paper the electronic structure of single vacancy defects and H-substitutional single vacancy defects is examined using a tight binding model.