Turn-off failures in individual and paralleled MCT's

Turn-off failures in individual and paralleled MCT's

A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated in which th...

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Veröffentlicht in:IEEE transactions on power electronics 1996-03, Vol.11 (2), p.299-303
Hauptverfasser: Afridi, K.K., Kassakian, J.G.
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Applied sciences
Capacitance
Commercialization
Electrical engineering
Electrical equipment
Electronics
Exact sciences and technology
Failure analysis
Insulated gate bipolar transistors
MOSFET circuits
Other multijunction devices. Power transistors. Thyristors
Power semiconductor switches
Proximity effect
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thyristors
Voltage control
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Beschreibung
Zusammenfassung:A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated in which the slower of the two MCTs fails to turn off. This is caused by the increase in anode current through the slower device and the decrease in gate voltage rise-time due to the MCTs Miller capacitance.
ISSN:0885-8993
1941-0107
DOI:10.1109/63.486179