Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs

Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs

The total base-collector capacitance (C/sub BC/) of GaInAs/InP double heterojunction bipolar transistors (DHBTs) has been reduced by the etching away of the semiconductor layers below the extrinsic base region, resulting in an undercut structure. The reduction was further enhanced by using a novel c...

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Veröffentlicht in:IEEE electron device letters 1996-03, Vol.17 (3), p.97-99
Hauptverfasser: Miyamoto, Y., Rios, J.M.M., Dentai, A.G., Chandrasekhar, S.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Contact resistance
Dielectric constant
Dielectric materials
Etching
Indium phosphide
Optical materials
Polyimides
Robustness
Semiconductor materials
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Beschreibung
Zusammenfassung:The total base-collector capacitance (C/sub BC/) of GaInAs/InP double heterojunction bipolar transistors (DHBTs) has been reduced by the etching away of the semiconductor layers below the extrinsic base region, resulting in an undercut structure. The reduction was further enhanced by using a novel composite subcollector structure. A 54% reduction of total C/sub BC/ and improvement of microwave characteristics (an increase of 20% in f/sub T/ and 38% in f/sub max/) were observed as a result of the undercut process.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.485179