All selective MOVPE grown BH-LDs fabricated by the novel self-alignment process

1.3 μm-strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LDs. The fabrication process, which completely eliminates semiconductor etching, is very promisin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE photonics technology letters 1996-02, Vol.8 (2), p.179-181
Hauptverfasser:	Sakata, Y., Delansay, P., Inomoto, Y., Yamaguchi, M., Murakami, T., Hasumi, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxial growth Epitaxial layers Etching Laboratories National electric code Optical buffering Optical device fabrication Power generation Quantum well devices Reproducibility of results
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!