All selective MOVPE grown BH-LDs fabricated by the novel self-alignment process

All selective MOVPE grown BH-LDs fabricated by the novel self-alignment process

1.3 μm-strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LDs. The fabrication process, which completely eliminates semiconductor etching, is very promisin...

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Veröffentlicht in:IEEE photonics technology letters 1996-02, Vol.8 (2), p.179-181
Hauptverfasser: Sakata, Y., Delansay, P., Inomoto, Y., Yamaguchi, M., Murakami, T., Hasumi, H.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Epitaxial layers
Etching
Laboratories
National electric code
Optical buffering
Optical device fabrication
Power generation
Quantum well devices
Reproducibility of results
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Zusammenfassung:1.3 μm-strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LDs. The fabrication process, which completely eliminates semiconductor etching, is very promising to realize high-performance LDs with excellent uniformity and reproducibility. The light output power was remarkably improved by a factor of two, compared with previous selective MOVPE-LDs.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.484233