A novel technique for fabricating semiconductor nanodevice arrays on silicon

We have developed a novel low cost nanogrowth technology for the fabrication of periodic arrays of semiconductor quantum dots on silicon with good device size uniformity. The technique utilizes material growth on a preformed template formed by electrochemical etching of aluminum on silicon. The template contains a periodic array of pores in which the semiconductor material is synthesized. The technique is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, VLSI compatible and has the potential for integration of quantum dot devices with silicon integrated circuits.