Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It i...

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Bibliographische Detailangaben
Hauptverfasser: Groenland, A.W., Wolters, R.A.M., Kovalgin, A.Y., Schmitz, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductive films
Electrodes
Fabrication
Probes
Semiconductor films
Sputter etching
Testing
Tin
Transistors
Wet etching
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Beschreibung
Zusammenfassung:Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2009.4814639