An Analysis of Temperature Impact on MOSFET Mismatch
Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implem...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 61 |
|---|---|
| container_issue | |
| container_start_page | 56 |
| container_title | |
| container_volume | |
| creator | Mennillo, S. Spessot, A. Vendrame, L. Bortesi, L. |
| description | Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations. |
| doi_str_mv | 10.1109/ICMTS.2009.4814610 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4814610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4814610</ieee_id><sourcerecordid>4814610</sourcerecordid><originalsourceid>FETCH-LOGICAL-i241t-1bedc5c1abf9a8377bda3dcc4f0ff959474c48eb25e20b0c573ca9cc926f6da63</originalsourceid><addsrcrecordid>eNotj8FOwzAQRC2gEmnpD8DFP5Cyu14n8TGqoFRq1EPDuXIcWwQ1aZSEQ_-eIjqXOTzNk0aIZ4QVIpjX7booDysCMCvOkBOEOxER6ixGIHMv5sjEzKQNPogIIcXYgKKZmP9tDBCQehTLcfyGa1grJIgE553MO3u6jM0oz0GWvu39YKefwctt21s3yXMni_3h_a2URTO2dnJfT2IW7Gn0y1svxOcVrz_i3X6zXee7uCHGKcbK1047tFUwNlNpWtVW1c5xgBCMNpyy48xXpD1BBU6nylnjnKEkJLVN1EK8_Hsb7_2xH5rWDpfj7b36BfXFSS4</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An Analysis of Temperature Impact on MOSFET Mismatch</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mennillo, S. ; Spessot, A. ; Vendrame, L. ; Bortesi, L.</creator><creatorcontrib>Mennillo, S. ; Spessot, A. ; Vendrame, L. ; Bortesi, L.</creatorcontrib><description>Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations.</description><identifier>ISSN: 1071-9032</identifier><identifier>ISBN: 1424442591</identifier><identifier>ISBN: 9781424442591</identifier><identifier>EISSN: 2158-1029</identifier><identifier>DOI: 10.1109/ICMTS.2009.4814610</identifier><identifier>LCCN: 2009902023</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Current measurement ; Gain measurement ; Geometry ; Measurement techniques ; Monte Carlo methods ; MOSFET circuits ; Particle measurements ; Temperature distribution ; Testing</subject><ispartof>2009 IEEE International Conference on Microelectronic Test Structures, 2009, p.56-61</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4814610$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4814610$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mennillo, S.</creatorcontrib><creatorcontrib>Spessot, A.</creatorcontrib><creatorcontrib>Vendrame, L.</creatorcontrib><creatorcontrib>Bortesi, L.</creatorcontrib><title>An Analysis of Temperature Impact on MOSFET Mismatch</title><title>2009 IEEE International Conference on Microelectronic Test Structures</title><addtitle>ICMTS</addtitle><description>Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations.</description><subject>Analytical models</subject><subject>Current measurement</subject><subject>Gain measurement</subject><subject>Geometry</subject><subject>Measurement techniques</subject><subject>Monte Carlo methods</subject><subject>MOSFET circuits</subject><subject>Particle measurements</subject><subject>Temperature distribution</subject><subject>Testing</subject><issn>1071-9032</issn><issn>2158-1029</issn><isbn>1424442591</isbn><isbn>9781424442591</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FOwzAQRC2gEmnpD8DFP5Cyu14n8TGqoFRq1EPDuXIcWwQ1aZSEQ_-eIjqXOTzNk0aIZ4QVIpjX7booDysCMCvOkBOEOxER6ixGIHMv5sjEzKQNPogIIcXYgKKZmP9tDBCQehTLcfyGa1grJIgE553MO3u6jM0oz0GWvu39YKefwctt21s3yXMni_3h_a2URTO2dnJfT2IW7Gn0y1svxOcVrz_i3X6zXee7uCHGKcbK1047tFUwNlNpWtVW1c5xgBCMNpyy48xXpD1BBU6nylnjnKEkJLVN1EK8_Hsb7_2xH5rWDpfj7b36BfXFSS4</recordid><startdate>200903</startdate><enddate>200903</enddate><creator>Mennillo, S.</creator><creator>Spessot, A.</creator><creator>Vendrame, L.</creator><creator>Bortesi, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200903</creationdate><title>An Analysis of Temperature Impact on MOSFET Mismatch</title><author>Mennillo, S. ; Spessot, A. ; Vendrame, L. ; Bortesi, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-1bedc5c1abf9a8377bda3dcc4f0ff959474c48eb25e20b0c573ca9cc926f6da63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Analytical models</topic><topic>Current measurement</topic><topic>Gain measurement</topic><topic>Geometry</topic><topic>Measurement techniques</topic><topic>Monte Carlo methods</topic><topic>MOSFET circuits</topic><topic>Particle measurements</topic><topic>Temperature distribution</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Mennillo, S.</creatorcontrib><creatorcontrib>Spessot, A.</creatorcontrib><creatorcontrib>Vendrame, L.</creatorcontrib><creatorcontrib>Bortesi, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mennillo, S.</au><au>Spessot, A.</au><au>Vendrame, L.</au><au>Bortesi, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An Analysis of Temperature Impact on MOSFET Mismatch</atitle><btitle>2009 IEEE International Conference on Microelectronic Test Structures</btitle><stitle>ICMTS</stitle><date>2009-03</date><risdate>2009</risdate><spage>56</spage><epage>61</epage><pages>56-61</pages><issn>1071-9032</issn><eissn>2158-1029</eissn><isbn>1424442591</isbn><isbn>9781424442591</isbn><abstract>Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.2009.4814610</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1071-9032 |
| ispartof | 2009 IEEE International Conference on Microelectronic Test Structures, 2009, p.56-61 |
| issn | 1071-9032 2158-1029 |
| language | eng |
| recordid | cdi_ieee_primary_4814610 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Current measurement Gain measurement Geometry Measurement techniques Monte Carlo methods MOSFET circuits Particle measurements Temperature distribution Testing |
| title | An Analysis of Temperature Impact on MOSFET Mismatch |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T21%3A43%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20Analysis%20of%20Temperature%20Impact%20on%20MOSFET%20Mismatch&rft.btitle=2009%20IEEE%20International%20Conference%20on%20Microelectronic%20Test%20Structures&rft.au=Mennillo,%20S.&rft.date=2009-03&rft.spage=56&rft.epage=61&rft.pages=56-61&rft.issn=1071-9032&rft.eissn=2158-1029&rft.isbn=1424442591&rft.isbn_list=9781424442591&rft_id=info:doi/10.1109/ICMTS.2009.4814610&rft_dat=%3Cieee_6IE%3E4814610%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4814610&rfr_iscdi=true |