Study of radiation effects on PIN photodiodes with deep-trap levels using computer modeling

In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of un...

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Hauptverfasser: Cappelletti, M.A., Cedola, A.P., Baron, S., Casas, G., Peltzer y Blanca, E.L.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.
ISSN:2373-0862
DOI:10.1109/LATW.2009.4813803