Origin of the low frequency type curve in Silicon-on-Sapphire MOS capacitors

Origin of the low frequency type curve in Silicon-on-Sapphire MOS capacitors

MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs surface silicon-sapphire interface quality.

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Bibliographische Detailangaben
Hauptverfasser: Domyo, H., Bertling, K., Ho, T., Kistler, N., Imthurn, G., Stuber, M., Rakic, A.D., Yew-Tong Yeow
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Australia
Capacitance-voltage characteristics
CMOS technology
Electric variables measurement
Frequency
Measurement standards
MOS capacitors
Semiconductor films
Semiconductor-insulatior interface
Silicon
Silicon on insulator technology
Testing
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Beschreibung
Zusammenfassung:MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs surface silicon-sapphire interface quality.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2008.4802108