High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers

In conclusion, an AlGaN/GaN HEMT-compatible lateral field-effect rectifier is demonstrated by utilizing the threshold-voltage controlling capability of the fluorine plasma treatment technique. The rectifier features low on-resistance, low turn-on voltage, high temperature operation and high reverse breakdown voltage. The rectifier is expected to exhibit fast reverse recovery time because of its unipolar nature. In addition, the rectifiers are fabricated with the same process as the normally-off AlGaN/GaN HEMTs, indicating a robust low-cost approach of realizing GaN-based power integrated circuits.