Read Disturb in NROM Charge Trapping Non-Volatile Memory Device

Read Disturb in NROM Charge Trapping Non-Volatile Memory Device

We investigated threshold voltage (V T ) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the first time it is demonstrated that channel-initiated secondary electron injection (CHISEL) mechanism is the main source of the "read di...

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Bibliographische Detailangaben
Hauptverfasser: Shainsky, N., Bloom, I., Shacham, Y., Eitan, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
Channel hot electron injection
Charge carrier processes
Electron traps
Low voltage
Nonvolatile memory
Radiative recombination
Spontaneous emission
Threshold voltage
Tunneling
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Beschreibung
Zusammenfassung:We investigated threshold voltage (V T ) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the first time it is demonstrated that channel-initiated secondary electron injection (CHISEL) mechanism is the main source of the "read disturb" experimental results in advanced process devices. This mechanism is generic to non-volatile memories (NVM) devices and must be minimized to avoid data corruption during read.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2008.4800837