Multi-bit functional NOR type SONOS memories

Multi-bit functional NOR type SONOS memories

We show that nearly 90 electrons can be stored at 30 nm dimensions of memory nodes, sufficient for reproducibility with having multi-bit memory windows, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. This work has achieved ultra-low number o...

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Hauptverfasser: Moonkyung Kim, Chung Woo Kim, Jo-won Lee, Tiwari, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carrier confinement
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
MONOS devices
Network address translation
Nonvolatile memory
SONOS devices
Temperature
Voltage
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Beschreibung
Zusammenfassung:We show that nearly 90 electrons can be stored at 30 nm dimensions of memory nodes, sufficient for reproducibility with having multi-bit memory windows, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. This work has achieved ultra-low number of electron storage while achieving high threshold shifts and demonstrates predictability through self-consistent modeling of programming and erasure characteristics.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2008.4800735