Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films
Platinum (Pt)-incorporation into nickel silicide films is the promising approach to reduce the contact resistance (R C ) at silicide/Si interface. Physical properties of Ni 1-x Pt x Si films were investigated by using local electrode atom probe (LEAP); The distributions of Pt and dopants (such as As...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Platinum (Pt)-incorporation into nickel silicide films is the promising approach to reduce the contact resistance (R C ) at silicide/Si interface. Physical properties of Ni 1-x Pt x Si films were investigated by using local electrode atom probe (LEAP); The distributions of Pt and dopants (such as As and B) were analyzed both at silicide/Si interface and at silicide grain boundary. The silicide grain-size miniaturization was clearly observed by Pt-incorporation. The impacts of silicide grain size on electrical properties and thermal stability were clarified depending on the Pt concentration. Finally, R C reduction depending on the incorporated-Pt concentration was experimentally shown in both nMOSFETs and pMOSFETs. |
---|---|
ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2008.4796851 |