Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to reali...

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Bibliographische Detailangaben
Hauptverfasser: Komori, Y., Kido, M., Kito, M., Katsumata, R., Fukuzumi, Y., Tanaka, H., Nagata, Y., Ishiduki, M., Aochi, H., Nitayama, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Costs
Electronic mail
FETs
Flash memory
Information systems
Semiconductor films
Silicon compounds
Stress control
Substrates
Testing
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Beschreibung
Zusammenfassung:Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796831