Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.

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Bibliographische Detailangaben
Hauptverfasser:	Ernst, T., Duraffourg, L., Dupre, C., Bernard, E., Andreucci, P., Becu, S., Ollier, E., Hubert, A., Halte, C., Buckley, J., Thomas, O., Delapierre, G., Deleonibus, S., de Salvo, B., Robert, P., Faynot, O.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Costs Crystallization Etching Germanium silicon alloys MOSFETs Nanoscale devices Silicon germanium Silicon on insulator technology Thin film devices
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Beschreibung
Zusammenfassung:	Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.
ISSN:	0163-1918 2156-017X
DOI:	10.1109/IEDM.2008.4796804