High performance oxide thin film transistors with double active layers

We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm 2 /V.sec, the acceptable threshold voltage of about 0.5 V and...

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Bibliographische Detailangaben

Hauptverfasser:	Sun Il Kim, Chang Jung Kim, Jae Chul Park, Ihun Song, Sang Wook Kim, Huaxiang Yin, Eunha Lee, Jae Chul Lee, Youngsoo Park
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Dry etching Flat panel displays Indium tin oxide Plasma applications Plasma chemistry Plasma temperature Stability Stress Thin film transistors Threshold voltage
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