High performance oxide thin film transistors with double active layers

High performance oxide thin film transistors with double active layers

We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm 2 /V.sec, the acceptable threshold voltage of about 0.5 V and...

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Bibliographische Detailangaben
Hauptverfasser: Sun Il Kim, Chang Jung Kim, Jae Chul Park, Ihun Song, Sang Wook Kim, Huaxiang Yin, Eunha Lee, Jae Chul Lee, Youngsoo Park
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dry etching
Flat panel displays
Indium tin oxide
Plasma applications
Plasma chemistry
Plasma temperature
Stability
Stress
Thin film transistors
Threshold voltage
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Zusammenfassung:We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm 2 /V.sec, the acceptable threshold voltage of about 0.5 V and the low Vth shift less than 1 V under voltage stress. These are very promising results for applications in driving large area AMOLED and AMLCD display.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796617