High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45nm-node nMOSFET with SMT and tensile liner stressors. In addition, eS...

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Hauptverfasser: Yang, B. Frank, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., Yang, B., de Souza, J.P., Harley, E.C.T., Greene, B., Gehring, A., Cai, M., Aime, D., Sun, S., Meer, H., Holt, J., Theodore, D., Zollner, S., Grudowski, P., Sadana, D., Park, D.-G., Mocuta, D., Schepis, D., Maciejewski, E., Luning, S., Pellerin, J., Leobandung, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
MOSFET circuits
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Beschreibung
Zusammenfassung:For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380nm to 190nm poly-pitches.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796611