A Planar CMOS Field-Emission Vacuum Magnetic Sensor

We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of 4time...

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Veröffentlicht in:	IEEE transactions on electron devices 2009-04, Vol.56 (4), p.692-695
Hauptverfasser:	French, P.J., Kenyon, A.J., Garner, D.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Applied sciences Cathodes CMOS Deflection Design. Technologies. Operation analysis. Testing Devices Electronics Etching Exact sciences and technology Field emission Integrated circuits Lithography Logic gates Magnetic devices Magnetic fields magnetic sensing Magnetic sensors Magnetometers Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensitivity Sensors Silicon Vacuum microelectronics
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Beschreibung
Zusammenfassung:	We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of 4times10 3 %/T is reported.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2009.2014430