Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS
The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamen...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2009-03, Vol.19 (3), p.173-175 |
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creator | Chuying Mao Sankaran, S. Eunyoung Seok Nallani, C.S. O, K.K. |
description | The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz. |
doi_str_mv | 10.1109/LMWC.2009.2013744 |
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The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2009.2013744</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; CMOS ; CMOS technology ; Conversion ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic devices ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Frequency conversion ; frequency doubler ; Frequency doublers ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave technology ; millimeter-wave (MMW) ; Noise levels ; Power generation ; Schottky barrier diode ; Schottky barriers ; Schottky diodes ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon germanium ; Varistors</subject><ispartof>IEEE microwave and wireless components letters, 2009-03, Vol.19 (3), p.173-175</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</citedby><cites>FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4796232$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4796232$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21472876$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chuying Mao</creatorcontrib><creatorcontrib>Sankaran, S.</creatorcontrib><creatorcontrib>Eunyoung Seok</creatorcontrib><creatorcontrib>Nallani, C.S.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><title>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Conversion</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic devices</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency conversion</subject><subject>frequency doubler</subject><subject>Frequency doublers</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave technology</subject><subject>millimeter-wave (MMW)</subject><subject>Noise levels</subject><subject>Power generation</subject><subject>Schottky barrier diode</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon germanium</subject><subject>Varistors</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1PwzAMhisEEuPjByAuFRJw6nDqNMmOaDBA2sSBr2OUZq7I6NqRdEj8e1Jt4sCBi2Mrz2vZfpPkhMGQMRhdTWdv42EOMIqBoeR8JxmwolAZk4Lv9jmyjCGM9pODEBYAjCvOBslk5uraLakjn76ZL0pfjXeha306a-eUPtn3tus-vtMb15cTT59ramys23VZR41r0vHs8eko2atMHeh4-x4mL5Pb5_F9Nn28exhfTzOLqugyDnPLUYCqqMjnHJnlgNUciQhLyayhUhmhpKikAqQKhLEGeV4ajqUijofJ5abvyrdxktDppQuW6to01K6DVrKAHCQUkbz4l0ReABNKRPDsD7ho176JW2gl4m0lFhghtoGsb0PwVOmVd0vjvzUD3RugewN0b4DeGhA159vGJlhTV9401oVfYc64zOOqkTvdcC6e4feby5HIMccfzpCMvg</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Chuying Mao</creator><creator>Sankaran, S.</creator><creator>Eunyoung Seok</creator><creator>Nallani, C.S.</creator><creator>O, K.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Silicon germanium</topic><topic>Varistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chuying Mao</creatorcontrib><creatorcontrib>Sankaran, S.</creatorcontrib><creatorcontrib>Eunyoung Seok</creatorcontrib><creatorcontrib>Nallani, C.S.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chuying Mao</au><au>Sankaran, S.</au><au>Eunyoung Seok</au><au>Nallani, C.S.</au><au>O, K.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2009-03-01</date><risdate>2009</risdate><volume>19</volume><issue>3</issue><spage>173</spage><epage>175</epage><pages>173-175</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2009.2013744</doi><tpages>3</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Bandwidth Circuit properties CMOS CMOS technology Conversion Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency conversion frequency doubler Frequency doublers Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology millimeter-wave (MMW) Noise levels Power generation Schottky barrier diode Schottky barriers Schottky diodes Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Varistors |
title | Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS |
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