Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS

The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and wireless components letters 2009-03, Vol.19 (3), p.173-175
Hauptverfasser: Chuying Mao, Sankaran, S., Eunyoung Seok, Nallani, C.S., O, K.K.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 175
container_issue 3
container_start_page 173
container_title IEEE microwave and wireless components letters
container_volume 19
creator Chuying Mao
Sankaran, S.
Eunyoung Seok
Nallani, C.S.
O, K.K.
description The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.
doi_str_mv 10.1109/LMWC.2009.2013744
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4796232</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4796232</ieee_id><sourcerecordid>2315454541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</originalsourceid><addsrcrecordid>eNp9kU1PwzAMhisEEuPjByAuFRJw6nDqNMmOaDBA2sSBr2OUZq7I6NqRdEj8e1Jt4sCBi2Mrz2vZfpPkhMGQMRhdTWdv42EOMIqBoeR8JxmwolAZk4Lv9jmyjCGM9pODEBYAjCvOBslk5uraLakjn76ZL0pfjXeha306a-eUPtn3tus-vtMb15cTT59ramys23VZR41r0vHs8eko2atMHeh4-x4mL5Pb5_F9Nn28exhfTzOLqugyDnPLUYCqqMjnHJnlgNUciQhLyayhUhmhpKikAqQKhLEGeV4ajqUijofJ5abvyrdxktDppQuW6to01K6DVrKAHCQUkbz4l0ReABNKRPDsD7ho176JW2gl4m0lFhghtoGsb0PwVOmVd0vjvzUD3RugewN0b4DeGhA159vGJlhTV9401oVfYc64zOOqkTvdcC6e4feby5HIMccfzpCMvg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>861107353</pqid></control><display><type>article</type><title>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</title><source>IEEE Electronic Library (IEL)</source><creator>Chuying Mao ; Sankaran, S. ; Eunyoung Seok ; Nallani, C.S. ; O, K.K.</creator><creatorcontrib>Chuying Mao ; Sankaran, S. ; Eunyoung Seok ; Nallani, C.S. ; O, K.K.</creatorcontrib><description>The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2009.2013744</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; CMOS ; CMOS technology ; Conversion ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic devices ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Frequency conversion ; frequency doubler ; Frequency doublers ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave technology ; millimeter-wave (MMW) ; Noise levels ; Power generation ; Schottky barrier diode ; Schottky barriers ; Schottky diodes ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon germanium ; Varistors</subject><ispartof>IEEE microwave and wireless components letters, 2009-03, Vol.19 (3), p.173-175</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</citedby><cites>FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4796232$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4796232$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=21472876$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chuying Mao</creatorcontrib><creatorcontrib>Sankaran, S.</creatorcontrib><creatorcontrib>Eunyoung Seok</creatorcontrib><creatorcontrib>Nallani, C.S.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><title>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Conversion</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic devices</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency conversion</subject><subject>frequency doubler</subject><subject>Frequency doublers</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave technology</subject><subject>millimeter-wave (MMW)</subject><subject>Noise levels</subject><subject>Power generation</subject><subject>Schottky barrier diode</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon germanium</subject><subject>Varistors</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1PwzAMhisEEuPjByAuFRJw6nDqNMmOaDBA2sSBr2OUZq7I6NqRdEj8e1Jt4sCBi2Mrz2vZfpPkhMGQMRhdTWdv42EOMIqBoeR8JxmwolAZk4Lv9jmyjCGM9pODEBYAjCvOBslk5uraLakjn76ZL0pfjXeha306a-eUPtn3tus-vtMb15cTT59ramys23VZR41r0vHs8eko2atMHeh4-x4mL5Pb5_F9Nn28exhfTzOLqugyDnPLUYCqqMjnHJnlgNUciQhLyayhUhmhpKikAqQKhLEGeV4ajqUijofJ5abvyrdxktDppQuW6to01K6DVrKAHCQUkbz4l0ReABNKRPDsD7ho176JW2gl4m0lFhghtoGsb0PwVOmVd0vjvzUD3RugewN0b4DeGhA159vGJlhTV9401oVfYc64zOOqkTvdcC6e4feby5HIMccfzpCMvg</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Chuying Mao</creator><creator>Sankaran, S.</creator><creator>Eunyoung Seok</creator><creator>Nallani, C.S.</creator><creator>O, K.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090301</creationdate><title>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</title><author>Chuying Mao ; Sankaran, S. ; Eunyoung Seok ; Nallani, C.S. ; O, K.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-40dc43608fe52d431c403fd3eee3b71caeb8a6876f7803ef06aca342ba43b8e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Conversion</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic devices</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency conversion</topic><topic>frequency doubler</topic><topic>Frequency doublers</topic><topic>Integrated circuits</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Millimeter wave technology</topic><topic>millimeter-wave (MMW)</topic><topic>Noise levels</topic><topic>Power generation</topic><topic>Schottky barrier diode</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon germanium</topic><topic>Varistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chuying Mao</creatorcontrib><creatorcontrib>Sankaran, S.</creatorcontrib><creatorcontrib>Eunyoung Seok</creatorcontrib><creatorcontrib>Nallani, C.S.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chuying Mao</au><au>Sankaran, S.</au><au>Eunyoung Seok</au><au>Nallani, C.S.</au><au>O, K.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2009-03-01</date><risdate>2009</risdate><volume>19</volume><issue>3</issue><spage>173</spage><epage>175</epage><pages>173-175</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2009.2013744</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1531-1309
ispartof IEEE microwave and wireless components letters, 2009-03, Vol.19 (3), p.173-175
issn 1531-1309
2771-957X
1558-1764
2771-9588
language eng
recordid cdi_ieee_primary_4796232
source IEEE Electronic Library (IEL)
subjects Applied sciences
Bandwidth
Circuit properties
CMOS
CMOS technology
Conversion
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic devices
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Frequency conversion
frequency doubler
Frequency doublers
Integrated circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Millimeter wave technology
millimeter-wave (MMW)
Noise levels
Power generation
Schottky barrier diode
Schottky barriers
Schottky diodes
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Varistors
title Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T19%3A40%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Millimeter%20Wave%20Varistor%20Mode%20Schottky%20Diode%20Frequency%20Doubler%20in%20CMOS&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Chuying%20Mao&rft.date=2009-03-01&rft.volume=19&rft.issue=3&rft.spage=173&rft.epage=175&rft.pages=173-175&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2009.2013744&rft_dat=%3Cproquest_RIE%3E2315454541%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=861107353&rft_id=info:pmid/&rft_ieee_id=4796232&rfr_iscdi=true