Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOS

The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamen...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2009-03, Vol.19 (3), p.173-175
Hauptverfasser:	Chuying Mao, Sankaran, S., Eunyoung Seok, Nallani, C.S., O, K.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Circuit properties CMOS CMOS technology Conversion Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency conversion frequency doubler Frequency doublers Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology millimeter-wave (MMW) Noise levels Power generation Schottky barrier diode Schottky barriers Schottky diodes Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Varistors
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Zusammenfassung:	The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2009.2013744