Ion implanted MOSFET's with very short channel lengths

Ion implanted MOSFET's with very short channel lengths

Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickn...

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Veröffentlicht in:IEEE Solid-State Circuits Society Newsletter 2007, Vol.12 (1), p.36-37
Hauptverfasser: Dennard, R. H., Gaensslen, F. H., Yu, H. N., Rideout, V. L., Bassous, E., LeBlanc, A.
Format: Artikel
Sprache:eng
Schlagworte:
Insulators
Ion implantation
Junctions
Logic gates
Substrates
Switches
Threshold voltage
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Zusammenfassung:Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickness, smaller devices can be achieved using ion implantation.
ISSN:1098-4232
DOI:10.1109/N-SSC.2007.4785542