The next step in cylindrical silicon-on-insulator microdosimetry: Charge collection results

The next step in cylindrical silicon-on-insulator microdosimetry: Charge collection results

The latest design in 2nd generation cylindrical SOI microdosimeters is introduced and investigated. The updated design features either a single or continuous guard ring around each cylindrical sensitive volume (SV) to prevent any unwanted lateral charge collection. Current-voltage measurements have...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ziebell, A.L., Lai, N.S., Lim, W.H., Reinhard, M. I., Prokopovich, D.A., Siegele, R., Dzurak, A.S., Rosenfeld, A.B
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Australia
Cylindrical silicon-on-insulator
Energy measurement
Geometry
Ion beams
microdosimetry
Nuclear and plasma sciences
Nuclear power generation
Physics
Q factor
radiobiological effectiveness
Semiconductor device testing
Semiconductor diodes
Silicon on insulator technology
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Beschreibung
Zusammenfassung:The latest design in 2nd generation cylindrical SOI microdosimeters is introduced and investigated. The updated design features either a single or continuous guard ring around each cylindrical sensitive volume (SV) to prevent any unwanted lateral charge collection. Current-voltage measurements have shown that the SV of each type of guard ring device exhibits good diode characteristics. A comprehensive IBIC investigation into the charge collection properties of each updated SV confirms that each SV is a well defined cylindrical site.
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.2008.4774588