High Power Microstrip GaN-HEMT Switches for Microwave Applications

High Power Microstrip GaN-HEMT Switches for Microwave Applications

In this paper the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the X-band switch exhibits 1 dB insertion loss, better than 37 dB isol...

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Hauptverfasser: Alleva, V., Megna, A., Peroni, M., Romanini, P., Bettidi, A., Cetronio, A., Ciccognani, W., De Dominicis, M., Ferrari, M., Giovine, E., Lanzieri, C., Limiti, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Fabrication
Gallium nitride
Insertion loss
Isolation technology
Microstrip
MMICs
Switches
Testing
Wideband
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Beschreibung
Zusammenfassung:In this paper the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation and a power handling capability at 9 GHz of better than 39 dBm at 1 dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2 dB, better than 25 dB isolation and a power handling capability of better than 38 dBm in the entire bandwidth.
DOI:10.1109/EMICC.2008.4772262