Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations

Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations

In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process...

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Bibliographische Detailangaben
Hauptverfasser: Abele, P., Schafer, M., Splettstosser, J., Thinnes, M., Stieglauer, H., Behammer, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Doping
Equations
Etching
Gallium arsenide
Leakage current
PHEMTs
Schottky barriers
Sensitivity analysis
Solid modeling
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Beschreibung
Zusammenfassung:In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.
DOI:10.1109/EMICC.2008.4772227