High Voltage RF LDMOS Technology for Broadcast Applications
We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
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| creator | Theeuwen, S.J.C. Sneijers, W.J.A. Klappe, J.G.E. de Boet, J.A.M. |
| description | We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching. |
| doi_str_mv | 10.1109/EMICC.2008.4772219 |
| format | Conference Proceeding |
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| identifier | ISBN: 9782874870071 |
| ispartof | 2008 European Microwave Integrated Circuit Conference, 2008, p.24-27 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Broadcast technology Broadcasting Integrated circuit technology Isolation technology Microwave integrated circuits Radio frequency Radiofrequency amplifiers Radiofrequency integrated circuits Voltage Wideband |
| title | High Voltage RF LDMOS Technology for Broadcast Applications |
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