High Voltage RF LDMOS Technology for Broadcast Applications

We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.

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Bibliographische Detailangaben
Hauptverfasser:	Theeuwen, S.J.C., Sneijers, W.J.A., Klappe, J.G.E., de Boet, J.A.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Broadcast technology Broadcasting Integrated circuit technology Isolation technology Microwave integrated circuits Radio frequency Radiofrequency amplifiers Radiofrequency integrated circuits Voltage Wideband
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Beschreibung
Zusammenfassung:	We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
DOI:	10.1109/EMICC.2008.4772219