Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate
A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices...
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| creator | Gevinti, E. Cerati, L. Sambi, M. Dissegna, M. Cecchetto, L. Andreini, A. Tazzoli, A. Meneghesso, G. |
| description | A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices are highlighted and a comparison with NDRIFTMOS-based active clamps is presented. |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Clamps CMOS technology Electrostatic discharge Isolation technology Performance analysis Protection Semiconductor optical amplifiers Silicon on insulator technology Thermal conductivity Voltage |
| title | Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate |
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