Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate

Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate

A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices...

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Bibliographische Detailangaben
Hauptverfasser: Gevinti, E., Cerati, L., Sambi, M., Dissegna, M., Cecchetto, L., Andreini, A., Tazzoli, A., Meneghesso, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Clamps
CMOS technology
Electrostatic discharge
Isolation technology
Performance analysis
Protection
Semiconductor optical amplifiers
Silicon on insulator technology
Thermal conductivity
Voltage
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Zusammenfassung:A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices are highlighted and a comparison with NDRIFTMOS-based active clamps is presented.