A novel structure for optimization of switching speed in nanoscale Double Gate Tunnel FET

In this paper, we propose a novel structure for optimizing on/off current ratio in the nanoscale double gate tunneling field effect transistor (DG-TFET). Proposed structure employs an "asymmetric" gate oxide thickness and gate work function engineering which reduces I OFF by 5 orders magni...

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Bibliographische Detailangaben

Hauptverfasser:	Mahdi, V., Morteza, F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Double-gate FETs
Online-Zugang:	Volltext bestellen
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