A novel structure for optimization of switching speed in nanoscale Double Gate Tunnel FET
In this paper, we propose a novel structure for optimizing on/off current ratio in the nanoscale double gate tunneling field effect transistor (DG-TFET). Proposed structure employs an "asymmetric" gate oxide thickness and gate work function engineering which reduces I OFF by 5 orders magni...
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| Format: | Tagungsbericht |
| Sprache: | eng |
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| Zusammenfassung: | In this paper, we propose a novel structure for optimizing on/off current ratio in the nanoscale double gate tunneling field effect transistor (DG-TFET). Proposed structure employs an "asymmetric" gate oxide thickness and gate work function engineering which reduces I OFF by 5 orders magnitude without affecting driving current. We discuss the effect of scaling on the I ON /I OFF ratio in the proposed structure. |
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| DOI: | 10.1109/SMELEC.2008.4770374 |