The impact of Silicon-Cap on electrical characteristics of Schottky Barrier p-MOSFET with strained channel

The impact of Silicon-Cap on electrical characteristics of Schottky Barrier p-MOSFET with strained channel

In order to improve the electrical characteristics of Schottky barrier p-MOSFETs with strained channel, we have proposed to reduce silicon-cap thickness in this paper. We demonstrate in the proposed hetero SBMOS, by decreasing the silicon-cap from 10 nm to 4 nm, the I on /I off ratio and transconduc...

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Bibliographische Detailangaben
Hauptverfasser: Fatemeh, K., Morteza, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Computational modeling
Doping
Electric variables
Germanium silicon alloys
MOSFET circuits
Schottky barriers
Semiconductor process modeling
Silicon germanium
Transconductance
Tunneling
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Zusammenfassung:In order to improve the electrical characteristics of Schottky barrier p-MOSFETs with strained channel, we have proposed to reduce silicon-cap thickness in this paper. We demonstrate in the proposed hetero SBMOS, by decreasing the silicon-cap from 10 nm to 4 nm, the I on /I off ratio and transconductance can be improved up to 98% and 20% respectively.
DOI:10.1109/SMELEC.2008.4770373