A comparative study between zirconium dioxide and hafnium dioxide dielectric charges

In this paper, two types of promising high-k dielectric films is studied which are hafnium dioxide, HfO 2 and zirconium dioxide,ZrO. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric films. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380degC were conducted on both of the MOS capacitors. It was concluded that hafnium dioxide and zirconium dioxide have low oxide and interface charges. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.