Al2O3-SiO2 based LTCC tape for packaging of RF devices

This paper reports the effect of firing temperature on the physical properties of the Al 2 O 3 -SiO 2 based LTCC materials for RF applications. Al 2 O 3 -SiO 2 material in the form of tape was prepared using mixed oxide method. The prepared tape was than laminated and fired at different firing temperatures in the range of 840 to 960degC. The physical properties of all samples were fully characterized, such as density, crystalline phase, dielectric and thermal expansion properties. It was found that the firing temperature influences the dielectric properties of the developed tape. In this study, the sample sintered at 880degC has the best dielectric property with dielectric constant, (epsiv r ) of 5.65 and dielectric loss, (tan delta) of 0.003 and this is suitable for RF applications. The CTE value of this sample is 2.63, which is close to that of Si (3.0-3.5).