Effects of phosphorus doping on J-V and C-V characteristics of pulsed laser deposited camphoric carbon/P-silicon heterojunction device

The current density-voltage (J-V) and capacitance voltage (C-V) characteristics of a p-n heterojunction device are studied. The device was fabricated by depositing phosphorus (P) doped carbon (C) thin film on p-type silicon (Si) substrate by pulsed laser deposition (PLD) technique at room temperature. Camphor (C 10 H 16 O), a natural source, was used as the starting precursor for the carbon layer of the heterostructure. Carbon layers of the device were obtained using target containing different amount of P. Both the J-V and C-V characteristics reveal that the device behaves as a successful p-n junction device up to a certain P content of the target material for C layer, and this is near about 5% of P by mass. At higher P content of the target, the material properties of the grown C layer on Si change and the device performance deteriorates. The built-in potential of the device with varying P content of the target material for C is also estimated and found them to agree well with the experimentally obtained device characteristics.