A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET's

Based on the exact solution of the two-dimensional Poisson equation, a new analytical behavior model consisting of the two-dimensional potential and threshold voltage for the short-channel tri-material gate-stack SOI MOSFETpsilas is developed. The model is verified by its good agreement with the num...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Chiang, T.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Dielectric substrates High K dielectric materials High-K gate dielectrics Leakage current Medical simulation MOSFET circuits Physics Poisson equations Threshold voltage
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