A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET's

Based on the exact solution of the two-dimensional Poisson equation, a new analytical behavior model consisting of the two-dimensional potential and threshold voltage for the short-channel tri-material gate-stack SOI MOSFETpsilas is developed. The model is verified by its good agreement with the num...

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Bibliographische Detailangaben
1. Verfasser:	Chiang, T.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Dielectric substrates High K dielectric materials High-K gate dielectrics Leakage current Medical simulation MOSFET circuits Physics Poisson equations Threshold voltage
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Beschreibung
Zusammenfassung:	Based on the exact solution of the two-dimensional Poisson equation, a new analytical behavior model consisting of the two-dimensional potential and threshold voltage for the short-channel tri-material gate-stack SOI MOSFETpsilas is developed. The model is verified by its good agreement with the numerical simulation of the device simulator MEDICI. The model not only offers physical insight into the device physics but also provides guidance for the basic design of the device.
DOI:	10.1109/EDSSC.2008.4760750