Flip Chip Bonding of 68 \times 68 MWIR LED Arrays

Flip Chip Bonding of 68 \times 68 MWIR LED Arrays

The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED ar...

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Veröffentlicht in:IEEE transactions on electronics packaging manufacturing 2009-01, Vol.32 (1), p.9-13
Hauptverfasser: Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Bonding processes
Cathodes
CMOS drivers
contact resistance
Contacts
Current-voltage characteristics
Flip chip
flip chip bonding
Indium
led array
Light emitting diodes
Optical arrays
Temperature
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Beschreibung
Zusammenfassung:The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
ISSN:1521-334X
1558-0822
DOI:10.1109/TEPM.2008.2005062