Studies of large area silicon microstrip sensors

Aiming at future large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and processes related to such sensors were: studied. Fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors from 4 inch wafers had become routine procedure with good yield...

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Hauptverfasser: Wen-Chin Tsay, Jhy-Wong Hong, Chang, Y.H., Chen, A., Hou, S.R., Hsu, S.L., Lin, C.H., Lin, W.T., Hsien-Jen Ting, Song-Tsang Chiang, Chuang, E., Su-Wen Hwang
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container_start_page 160
container_title
container_volume 1
creator Wen-Chin Tsay
Jhy-Wong Hong
Chang, Y.H.
Chen, A.
Hou, S.R.
Hsu, S.L.
Lin, C.H.
Lin, W.T.
Hsien-Jen Ting
Song-Tsang Chiang
Chuang, E.
Su-Wen Hwang
description Aiming at future large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and processes related to such sensors were: studied. Fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors from 4 inch wafers had become routine procedure with good yield rate. A 4/spl times/64 cm/sup 2/ long ladder, by assembling eight pieces of 4/spl times/8 cm/sup 2/ sensors together, had been tested at CERN SPS area. Test result shows such a detector is feasible.< >
doi_str_mv 10.1109/NSSMIC.1994.474368
format Conference Proceeding
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ispartof Proceedings of 1994 IEEE Nuclear Science Symposium - NSS'94, 1994, Vol.1, p.160-163 vol.1
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Assembly
Detectors
Leakage current
Microstrip
P-n junctions
Process design
Resistors
Silicon
Strips
Testing
title Studies of large area silicon microstrip sensors
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