Studies of large area silicon microstrip sensors

Studies of large area silicon microstrip sensors

Aiming at future large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and processes related to such sensors were: studied. Fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors from 4 inch wafers had become routine procedure with good yield...

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Bibliographische Detailangaben
Hauptverfasser: Wen-Chin Tsay, Jhy-Wong Hong, Chang, Y.H., Chen, A., Hou, S.R., Hsu, S.L., Lin, C.H., Lin, W.T., Hsien-Jen Ting, Song-Tsang Chiang, Chuang, E., Su-Wen Hwang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Assembly
Detectors
Leakage current
Microstrip
P-n junctions
Process design
Resistors
Silicon
Strips
Testing
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Zusammenfassung:Aiming at future large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and processes related to such sensors were: studied. Fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors from 4 inch wafers had become routine procedure with good yield rate. A 4/spl times/64 cm/sup 2/ long ladder, by assembling eight pieces of 4/spl times/8 cm/sup 2/ sensors together, had been tested at CERN SPS area. Test result shows such a detector is feasible.< >
DOI:10.1109/NSSMIC.1994.474368