Bistable resistive switching of pulsed laser deposited polycrystalline La0.67Sr0.33MnO3 films

Bistable resistive switching of polycrystalline La 0.67 Sr 0.33 MnO 3 (LSMO) thin films prepared by pulsed laser deposition (PLD) was investigated by applying voltage pulses with current compliance. Metallic LSMO films sandwiched by Ag and Pt electrodes show nonvolatile and reversible resistance switching behavior from a higher resistance state to a lower state with no data loss upon continuous readout. An active pulse width window was observed and the related threshold voltage was measured. Furthermore, the write/erase endurance switching was estimated over 103 cycles, demonstrating a strong potential with respect to future nonvolatile random access memory applications.