Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices
Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) or...
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| creator | Dan Xie Yongyuan Zang Yafeng Luo Tianling Ren Litian Liu |
| description | Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10 5 Hz, respectively. The multilayer film exhibits little polarization fatigue( |
| doi_str_mv | 10.1109/ICSICT.2008.4734628 |
| format | Conference Proceeding |
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X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10 5 Hz, respectively. The multilayer film exhibits little polarization fatigue(<5%) upon 10 10 switching cycles. The enhanced ferroelectric properties are mostly ascribed to the coupling reaction between the BFO and BNdT thin films, and the BNdT layer induces the crystallization of BFO thin film.</description><identifier>ISBN: 9781424421855</identifier><identifier>ISBN: 1424421853</identifier><identifier>EISBN: 9781424421862</identifier><identifier>EISBN: 1424421861</identifier><identifier>DOI: 10.1109/ICSICT.2008.4734628</identifier><identifier>LCCN: 2008901172</identifier><language>eng</language><publisher>IEEE</publisher><subject>Antiferromagnetic materials ; Bismuth ; Dielectric substrates ; Ferroelectric films ; Ferroelectric materials ; Neodymium ; Nonhomogeneous media ; Polarization ; Semiconductor films ; Transistors</subject><ispartof>2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.703-706</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4734628$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4734628$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dan Xie</creatorcontrib><creatorcontrib>Yongyuan Zang</creatorcontrib><creatorcontrib>Yafeng Luo</creatorcontrib><creatorcontrib>Tianling Ren</creatorcontrib><creatorcontrib>Litian Liu</creatorcontrib><title>Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices</title><title>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</title><addtitle>ICSICT</addtitle><description>Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10 5 Hz, respectively. The multilayer film exhibits little polarization fatigue(<5%) upon 10 10 switching cycles. The enhanced ferroelectric properties are mostly ascribed to the coupling reaction between the BFO and BNdT thin films, and the BNdT layer induces the crystallization of BFO thin film.</description><subject>Antiferromagnetic materials</subject><subject>Bismuth</subject><subject>Dielectric substrates</subject><subject>Ferroelectric films</subject><subject>Ferroelectric materials</subject><subject>Neodymium</subject><subject>Nonhomogeneous media</subject><subject>Polarization</subject><subject>Semiconductor films</subject><subject>Transistors</subject><isbn>9781424421855</isbn><isbn>1424421853</isbn><isbn>9781424421862</isbn><isbn>1424421861</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUM1KAzEYjEhBrX2CXvICXfOf7NGWVgvFHqznkibf4ie73SWbCn0Bn9sVi-BchoFhhhlCppwVnLPyYb14XS92hWDMFcpKZYS7IpPSOq6EUoI7I67_aa1H5O7HXjLOrbghk77_YAOUlsbpW_K1PL77Y4BIK0iphRpCThhol9oOUkboaVvROa5gKx_mKAuuXyIrnN6h3HJBm1OdsfZnSDT4zgfMbeqpzzS1bUMzNEOKz6cE1HddjUMPHmnEv54Inxigvyejytc9TC48Jm-r5W7xPNtsn9aLx80MOdN5JqRUikvwIUZfMa2MGXaqqOIhmGDtgZW20l467XzgwZSVM8Za7Yw9qMicHJPpby4CwL5L2Ph03l-ulN94OmWa</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Dan Xie</creator><creator>Yongyuan Zang</creator><creator>Yafeng Luo</creator><creator>Tianling Ren</creator><creator>Litian Liu</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices</title><author>Dan Xie ; Yongyuan Zang ; Yafeng Luo ; Tianling Ren ; Litian Liu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-2334413eacddaf054662444d4dbc6c77b097f5a3858ac1c69f866775867b4d083</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Antiferromagnetic materials</topic><topic>Bismuth</topic><topic>Dielectric substrates</topic><topic>Ferroelectric films</topic><topic>Ferroelectric materials</topic><topic>Neodymium</topic><topic>Nonhomogeneous media</topic><topic>Polarization</topic><topic>Semiconductor films</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Dan Xie</creatorcontrib><creatorcontrib>Yongyuan Zang</creatorcontrib><creatorcontrib>Yafeng Luo</creatorcontrib><creatorcontrib>Tianling Ren</creatorcontrib><creatorcontrib>Litian Liu</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dan Xie</au><au>Yongyuan Zang</au><au>Yafeng Luo</au><au>Tianling Ren</au><au>Litian Liu</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices</atitle><btitle>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</btitle><stitle>ICSICT</stitle><date>2008-10</date><risdate>2008</risdate><spage>703</spage><epage>706</epage><pages>703-706</pages><isbn>9781424421855</isbn><isbn>1424421853</isbn><eisbn>9781424421862</eisbn><eisbn>1424421861</eisbn><abstract>Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10 5 Hz, respectively. The multilayer film exhibits little polarization fatigue(<5%) upon 10 10 switching cycles. The enhanced ferroelectric properties are mostly ascribed to the coupling reaction between the BFO and BNdT thin films, and the BNdT layer induces the crystallization of BFO thin film.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2008.4734628</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Antiferromagnetic materials Bismuth Dielectric substrates Ferroelectric films Ferroelectric materials Neodymium Nonhomogeneous media Polarization Semiconductor films Transistors |
| title | Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices |
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