Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices

Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices

Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) or...

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Bibliographische Detailangaben
Hauptverfasser: Dan Xie, Yongyuan Zang, Yafeng Luo, Tianling Ren, Litian Liu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Antiferromagnetic materials
Bismuth
Dielectric substrates
Ferroelectric films
Ferroelectric materials
Neodymium
Nonhomogeneous media
Polarization
Semiconductor films
Transistors
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Zusammenfassung:Anti-ferromagnetic BiFeO 3 /Bi 3.15 Nd 0.85 Ti 3 O 12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm 2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO 2 /Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10 5 Hz, respectively. The multilayer film exhibits little polarization fatigue(
DOI:10.1109/ICSICT.2008.4734628