A new MOS varactor BSIM4 model with temperature effect

A new MOS varactor BSIM4 model with temperature effect

In this paper we present a new BSIM4-based RF MOS varactor model. The new model accurately models the varactor behavioral for the submicron MOS when the gate leakage effect needs to included. The model also accounts for the temperature effect when parasitic resistance and capacitance are considered...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhanfei Chen, Waisum Wong, Jenhao Cheng, Danmy He
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Equivalent circuits
Gate leakage
Integrated circuit modeling
Probes
Radio frequency
Resistors
Semiconductor device modeling
Temperature
Varactors
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Beschreibung
Zusammenfassung:In this paper we present a new BSIM4-based RF MOS varactor model. The new model accurately models the varactor behavioral for the submicron MOS when the gate leakage effect needs to included. The model also accounts for the temperature effect when parasitic resistance and capacitance are considered in the Q-factor extraction.
DOI:10.1109/ICSICT.2008.4734580