Modeling the substrate effect of RF MOSFET's based on four-port measurement

Modeling the substrate effect of RF MOSFET's based on four-port measurement

In this paper, several 0.13 μm RF NMOSFET's were characterized by 4-port s-parameter measurement and the parameters of the small-signal equivalent circuit model of the RF MOSFET's were extracted from the 4-port measurement data directly. The frequency range of 4-port measurement is extende...

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Bibliographische Detailangaben
Hauptverfasser: Shih-Dao Wu, Guo-Wei Huang, Kuo-hsiang Liao
Format: Tagungsbericht
Sprache:eng
Schlagworte:
4-port measurement
Capacitance
Circuit simulation
Circuit testing
Data mining
Electrical resistance measurement
Equivalent circuits
Frequency measurement
Immune system
MOSFET circuits
Radio frequency
RF MOSFET
substrate resistance
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Beschreibung
Zusammenfassung:In this paper, several 0.13 μm RF NMOSFET's were characterized by 4-port s-parameter measurement and the parameters of the small-signal equivalent circuit model of the RF MOSFET's were extracted from the 4-port measurement data directly. The frequency range of 4-port measurement is extended from 200 MHz to 20 GHz. While all parameters of the small-signal equivalent circuit model were extracted, the simulated and measured data were compared and found that they agreed with each other within the entire measurement frequency range.
DOI:10.1109/ARFTG.2006.4734373