Self-reduction of programming current density with deep phase-change memory scaling

It is shown that different physical factors point to characteristic size about 3 nm as the ultimate scaling limit for phase-change memory based on nucleation driven alloys. Size-dependences of melting temperature and thermal conductivity for sizes below 10 nm lead to faster reduction of programming...

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1. Verfasser:	Savransky, S.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Crystallization Current density Electrodes Phase change materials Phase change memory physical effects at nanoscale Principal component analysis programming current Resistance heating scaling Temperature Thermal conductivity Threshold voltage
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creator	Savransky, S.D.
description	It is shown that different physical factors point to characteristic size about 3 nm as the ultimate scaling limit for phase-change memory based on nucleation driven alloys. Size-dependences of melting temperature and thermal conductivity for sizes below 10 nm lead to faster reduction of programming current than simple geometrical scaling predicts. As the result the current density necessary to program phase-change memory decreases with characteristic size of active volume of a phase-change alloy.
doi_str_mv	10.1109/NVMT.2008.4731191
format	Conference Proceeding
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Size-dependences of melting temperature and thermal conductivity for sizes below 10 nm lead to faster reduction of programming current than simple geometrical scaling predicts. As the result the current density necessary to program phase-change memory decreases with characteristic size of active volume of a phase-change alloy.</description><identifier>ISBN: 9781424436590</identifier><identifier>ISBN: 1424436591</identifier><identifier>EISBN: 1424424119</identifier><identifier>EISBN: 9781424424115</identifier><identifier>DOI: 10.1109/NVMT.2008.4731191</identifier><identifier>LCCN: 2008903279</identifier><language>eng</language><publisher>IEEE</publisher><subject>Crystallization ; Current density ; Electrodes ; Phase change materials ; Phase change memory ; physical effects at nanoscale ; Principal component analysis ; programming current ; Resistance heating ; scaling ; Temperature ; Thermal conductivity ; Threshold voltage</subject><ispartof>2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4731191$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,27908,54903</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4731191$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Savransky, S.D.</creatorcontrib><title>Self-reduction of programming current density with deep phase-change memory scaling</title><title>2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS)</title><addtitle>NVMT</addtitle><description>It is shown that different physical factors point to characteristic size about 3 nm as the ultimate scaling limit for phase-change memory based on nucleation driven alloys. Size-dependences of melting temperature and thermal conductivity for sizes below 10 nm lead to faster reduction of programming current than simple geometrical scaling predicts. As the result the current density necessary to program phase-change memory decreases with characteristic size of active volume of a phase-change alloy.</description><subject>Crystallization</subject><subject>Current density</subject><subject>Electrodes</subject><subject>Phase change materials</subject><subject>Phase change memory</subject><subject>physical effects at nanoscale</subject><subject>Principal component analysis</subject><subject>programming current</subject><subject>Resistance heating</subject><subject>scaling</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Threshold voltage</subject><isbn>9781424436590</isbn><isbn>1424436591</isbn><isbn>1424424119</isbn><isbn>9781424424115</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkF9LwzAUxSMy0M1-APElX6D1Jk2T5lGGOmEqsuHryNKbNtJ_pB3Sb2_VXS5cfnDu4XAIuWWQMAb6_u3zdZ9wgDwRKmVMswuyZIKLeWe6JJFW-R-nMtOwIMtfrYaUK31FomH4gnlElspcX5PdDmsXByxOdvRdSztH-9CVwTSNb0tqTyFgO9IC28GPE_32YzUD9rSvzICxrUxbIm2w6cJEB2vq-euGLJypB4zOd0U-nh736028fX9-WT9sY69hjBmYrJCKq9xJjlynynJrURdMieKYaYY5SEAOhUKHTjgJ6mhspgybw6_I3b-nR8RDH3xjwnQ4F5L-ADSTUx8</recordid><startdate>200811</startdate><enddate>200811</enddate><creator>Savransky, S.D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200811</creationdate><title>Self-reduction of programming current density with deep phase-change memory scaling</title><author>Savransky, S.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-10a5d67278f62e2937c2cce9d174db591e8060e20d7efef4f607bac57a1453</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Crystallization</topic><topic>Current density</topic><topic>Electrodes</topic><topic>Phase change materials</topic><topic>Phase change memory</topic><topic>physical effects at nanoscale</topic><topic>Principal component analysis</topic><topic>programming current</topic><topic>Resistance heating</topic><topic>scaling</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Savransky, S.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Savransky, S.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Self-reduction of programming current density with deep phase-change memory scaling</atitle><btitle>2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS)</btitle><stitle>NVMT</stitle><date>2008-11</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>9781424436590</isbn><isbn>1424436591</isbn><eisbn>1424424119</eisbn><eisbn>9781424424115</eisbn><abstract>It is shown that different physical factors point to characteristic size about 3 nm as the ultimate scaling limit for phase-change memory based on nucleation driven alloys. Size-dependences of melting temperature and thermal conductivity for sizes below 10 nm lead to faster reduction of programming current than simple geometrical scaling predicts. As the result the current density necessary to program phase-change memory decreases with characteristic size of active volume of a phase-change alloy.</abstract><pub>IEEE</pub><doi>10.1109/NVMT.2008.4731191</doi><tpages>4</tpages></addata></record>
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Crystallization Current density Electrodes Phase change materials Phase change memory physical effects at nanoscale Principal component analysis programming current Resistance heating scaling Temperature Thermal conductivity Threshold voltage
title	Self-reduction of programming current density with deep phase-change memory scaling
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